The growing adoption of FRAM across different sectors can cause the global market of FRAM to expand at 3.78% CAGR across the review period (2018 to 2025). The presence of a ferroelectric layer in FRAM instead of a dielectric layer aids in achieving non-volatile memory. This surge in demand for non-volatile memory storage solutions is likely to cause a hike in the revenue generation of the worldwide FRAM market. MRFR recorded the global FRAM market to value at USD 265.4 Million in 2018 that is expected to increase to a valuation of USD 343.2 Mn by 2025.Segmental Analysis
The segmental study of the Ferroelectric RAM Market Applications is done on the basis of product type, application, and interface.
By interface, the market segments are serial and parallel. The serial segment to contribute significantly to the expansion of the global FRAM market in the assessment period. Features of serial FRAM, such as a variety of density and interface options that include I2C interface and serial peripheral interface (SPI) can propel the growth of the global market. According to MRFR analysis, the parallel FRAM segment can register high CAGR in the review period as parallel FRAM is a suitable substitute for SRAM in office equipment, industrial machinery, medical devices, and others as in this case data can be stored without the need for a battery.
By application, the market segments are metering or measurement, automotive, enterprise storage, telecommunication, factory automation, medical, and others. MRFR study reveals that the telecommunication segment is expected to thrive at a high CAGR across the review period, followed by the automotive segment. FRAM is extensively used in the infotainment system of automobiles and in telecom subsystems. Moreover, the high utility of FRAM in the medical field, such as by CT scan manufacturers, can also spur the FRAM market growth.
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